DocumentCode
2215955
Title
Optical and electrical properties of high and low resistive CuInSe2 films: a potential photoactive channel for chalcogen photo thin film transistor
Author
Song, Ki-Bong ; Kim, Jun-Ho ; Kim, Kyoung-Am
Author_Institution
Bio-Sensor Res. Team, Electron. & Telecommun. Res. Inst., Daejeon
Volume
1
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
550
Lastpage
551
Abstract
Chalcogen photo thin film transistor has been proposed. Using chalcogen alloys, to form a photoactive channel layer, high and low resistive CuInSe2 films are grown by thermal annealing and a three step process, respectively. Optical and electrical properties of the fabricated CuInSe2 films are investigated.
Keywords
annealing; copper compounds; electric properties; indium compounds; optical properties; selenium compounds; thin film transistors; CuInSe; CuInSe - Interface; CuInSe2 films; chalcogen alloys; chalcogen photo thin film transistor; electrical properties; optical properties; photoactive channel; thermal annealing; Absorption; Annealing; Biomedical optical imaging; Computational Intelligence Society; Optical films; Optical sensors; Substrates; Temperature; Thermal resistance; Thin film transistors; CuInSe2; chalcogen; photo thin film transisror;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location
Gyeongju
Print_ISBN
978-1-4244-0540-4
Electronic_ISBN
978-1-4244-0541-1
Type
conf
DOI
10.1109/NMDC.2006.4388897
Filename
4388897
Link To Document