Title :
Concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz
Author :
Saad, Paul ; Colantonio, Paolo ; Moon, Junghwan ; Piazzon, Luca ; Giannini, Franco ; Andersson, Kristoffer ; Kim, Bumman ; Fager, Christian
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Gothenburg, Sweden
Abstract :
This paper presents the design, implementation, and experimental results of a highly efficient concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare-die approach, in conjunction with a harmonic source-pull/load-pull simulation approach, are used in order to design and implement the harmonically tuned dual-band PA. For a continuous wave output power of 42.3 dBm the measured gain is 12 dB in the two frequency bands; while the power added efficiency is 64% in both bands. Linearized modulated measurements, using concurrently 10 MHz LTE and WiMAX signals, show an average PAE of 25% and and adjacent channel leakage ratio of -48 dBc and -47 dBc at 1.8 GHz and 2.4 GHz, respectively.
Keywords :
III-V semiconductors; Long Term Evolution; WiMax; gallium compounds; high electron mobility transistors; power amplifiers; wide band gap semiconductors; GaN; GaN-HEMT power amplifier; LTE; WiMAX signal; adjacent channel leakage ratio; bare-die approach; concurrent dual-band power amplifier; dual-band PA; frequency 1.8 GHz; frequency 2.4 GHz; harmonic load-pull simulation; harmonic source-pull simulation; linearized modulated measurement; power added efficiency; Dual band; Harmonic analysis; Load modeling; Power amplifiers; Power generation; Power measurement; Wireless communication; digital predistortion (DPD); dual-band; gallium nitride (GaN); harmonic termination; high electron mobility transistor (HEMT); power amplifier (PA);
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2012 IEEE 13th Annual
Conference_Location :
Cocoa Beach, FL
Print_ISBN :
978-1-4673-0129-9
Electronic_ISBN :
978-1-4673-0128-2
DOI :
10.1109/WAMICON.2012.6208427
