Fabricated Si nanowire using nanoimprint method

This letter reports the fabrication of Si nanowire using nanoimprint Method. We propose silicon nanowire fabricate method which enables us to provide mass production compatible and electronics device. The a-Si films were deposited with mixture gas of argon and helium to minimize the argon incorporation into the film. The a-Si films were then laser crystallized using XeCl excimer laser irradiation and nanoimprint processed was fabricated with quartz mask.