Title :
Laser formed connections for programmable wiring
Author :
Bernstein, Joseph B. ; Zhang, Wei ; Nicholas, Carl H.
Author_Institution :
Dept. of Mater. & Nucl. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Solid metallic connections have been successfully formed between two standard levels of metallization using a focused IR laser system. This new process of laser formed connections has been used to link chains with resistances of less than 0.8 Ω per connection. Commercial laser repair systems used extensively by the memory industry were employed to perform over 100000 individual links over a wide set of laser parameters without failure. This technology has the potential to replace laser fuse cutting techniques to program wiring in silicon-on-silicon, wafer scale integration (WSI), and system-on-a-chip applications. Furthermore, because it is an additive process and the passivation remains completely intact, it lends itself to redundancy with perfect yield and exceptional reliability
Keywords :
CMOS integrated circuits; integrated circuit interconnections; integrated circuit metallisation; laser materials processing; wafer-scale integration; WSI; additive process; focused IR laser system; laser formed connections; metallization levels; programmable wiring; redundancy; reliability; solid metallic connections; system-on-a-chip applications; two-level metal CMOS process; wafer scale integration; yield; Circuits; Dielectrics; Inorganic materials; Laser beam cutting; Optical materials; System-on-a-chip; Thermal conductivity; Thermal expansion; Wafer scale integration; Wiring;
Conference_Titel :
Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-4292-5
DOI :
10.1109/CICC.1998.694928
