Title :
An integrated-circuit reliability optimization simulator - XDRS
Author :
Hongxia, Liu ; Yue, Hao ; Zhi, SUN
Author_Institution :
Inst. of Microelectron., Xidian Univ., China
Abstract :
A new global optimization algorithm is presented in IC reliability simulator XDRS. Its dominant factor is introduction of NTM (number-theoretic method) and combination of the weighted centroid, the weighted reflection and the quadratic approximation. Two current degradation models - substrate current degradation model and gate current degradation model - have been implemented in XDRS. These simulation schemes are implemented in XDRS to evaluation circuit performance. The improved algorithm has been applied to the two-stage sense amplifier to minimize hot-carrier induced devices degradation. The results show that the proposed approach can decrease HCE (hot-carrier effects) and increase circuit lifetime.
Keywords :
circuit optimisation; circuit simulation; hot carriers; integrated circuit modelling; integrated circuit reliability; number theory; HCE; IC reliability simulator; NTM; XDRS; circuit lifetime; circuit performance; current degradation models; gate current degradation model; global optimization algorithm; hot-carrier induced device degradation; integrated-circuit reliability optimization simulator; number-theoretic method; quadratic approximation; substrate current degradation model; two-stage sense amplifier; weighted centroid; weighted reflection; Algorithm design and analysis; Circuit optimization; Circuit simulation; Degradation; Design optimization; Integrated circuit reliability; MOSFET circuits; Microelectronics; Reflection; Scattering;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982064