Device engineering for a modular 650 V transistor assortment

Using a trench isolated 650 V quasi-vertical n-channel DMOS as a starting point several new 650 V transistor types have been evaluated. Mainly by design measures a 650 V depletion DMOS, a 650 V PMOS and a 650 V IGBT were created for a modular integration into the process flow. Design modifications like increased channel length, well constructions and drain modifications were used to create the new devices. Original n-channel DMOS design features like curvatures or field plate constructions have been re-used. Necessary new process steps for the depletion transistor and for the IGBT were kept to minimum additional process effort and use a flexible process approach with independent addable modules.