A DC to 30GHz ultra-wideband CMOS T/R switch

Author

Mou Shouxian ; Kaixue, Ma ; Seng, Yeo Kiat ; Thangarasu, Bharatha Kumar ; Mahalingam, Nagarajan

Author_Institution

Circuits & Syst. Div., Nanyang Technol. Univ., Singapore, Singapore

fYear

2011

fDate

27-28 Sept. 2011

Firstpage

1

Lastpage

4

Abstract

A differential low-cost T/R switch based on a 0.18μm SiGe BiCMOS process with only CMOS components is developed. The proposed switch achieves an ultra-wide bandwidth of 30GHz. For single-end SPDT applications, the switch has 1.5dB to 3.3dB insertion loss and 20dB to 80dB isolation. Input/output matching has been realized from DC to 40GHz. The switch requires no biasing voltage except the 1.8V voltage supply and ground potentials, which greatly enhances its application feasibility. The switch also has a compact chip area of 0.025mm² (for SPDT) and 0.05mm² for differential SPDT applications.

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; semiconductor switches; silicon compounds; ultra wideband technology; SiGe; SiGe BiCMOS process; bandwidth 30 GHz; differential low-cost T/R switch; single-end SPDT applications; size 0.18 mum; ultra-wideband CMOS T/R switch; voltage 1.8 V; CMOS integrated circuits; Impedance matching; Insertion loss; MOSFETs; Switches; Switching circuits; CMOS; RFIC; SPDT; SiGe; switch; ultra-wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden (SCD), 2011

Conference_Location

Dresden

Print_ISBN

978-1-4577-0431-4

Type

conf

DOI

10.1109/SCD.2011.6068715

Filename

6068715