Device characterization in 90 nm CMOS up to 110 GHz

Author

Hamidian, Amin ; Subramanian, Viswanathan ; Shu, Ran ; Malignaggi, Andrea ; Boeck, Georg

Author_Institution

Microwave Eng. Lab., Berlin Inst. of Technol., Berlin, Germany

fYear

2011

fDate

27-28 Sept. 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents the small signal characterization of nMOS transistors in 90 nm CMOS technology. Two different transistor widths are characterized based on the measurement results up to 110 GHz. The widths of the transistors are optimized for low noise and power amplifier applications at 60 GHz. For the characterization purpose, the on-chip feeding structures (pads, transmission lines and vias) are extracted from the measurement results with the help of Electro Magnetic simulations.

Keywords

CMOS integrated circuits; low noise amplifiers; power amplifiers; CMOS; device characterization; electro magnetic simulation; frequency 60 GHz; low noise amplifier; nMOS transistor; on-chip feeding structures; power amplifier; signal characterization; size 90 nm; CMOS integrated circuits; Integrated circuit modeling; Layout; Power transmission lines; Semiconductor device modeling; Transistors; Transmission line measurements; CMOS transistor model; low noise amplifier; millimeter-wave; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference Dresden (SCD), 2011

Conference_Location

Dresden

Print_ISBN

978-1-4577-0431-4

Type

conf

DOI

10.1109/SCD.2011.6068732

Filename

6068732