A divide-by-2 static frequency divider with AlGaAs/GaAs HBTs technology

Author

Li, Xian-Jie ; Zeng, Qing-Ming ; Xu, Xiao-Chun ; Guo, Jian-Kui ; Wang, Quan-Shu ; Liu, Wei-Ji ; Liang, Chun-Guang

Author_Institution

State Key Lab. of ASIC, Hebei Semicond. Res. Inst., Shijiazhuang, China

Volume

2

fYear

2001

fDate

22-25 Oct. 2001

Firstpage

1331

Abstract

A divide-by-2 Static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was described based on a master-slave D flip-flops. For a HBT with a 3.5×8 μm² emitter had a DC current gain of 30. The unity current gain cutoff frequency (F_t) and the maximum oscillation frequency (F_max) of the HBTs were extrapolated to about 40 GHz. The IC was tested from DC to 8 GHz and demonstrated proper function under a supply voltage of -7 V to -8 V.

Keywords

III-V semiconductors; aluminium compounds; bipolar logic circuits; flip-flops; frequency dividers; gallium arsenide; heterojunction bipolar transistors; -7 to -8 V; 0 to 8 GHz; 40 GHz; AlGaAs-GaAs; AlGaAs/GaAs HBT IC; DC current gain; divide-by-two static frequency divider; master-slave D flip-flop; maximum oscillation frequency; unity current gain cutoff frequency; Application specific integrated circuits; Bipolar transistors; Circuit testing; Frequency conversion; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Integrated circuit technology; MODFETs; Master-slave;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on

Print_ISBN

0-7803-6520-8

Type

conf

DOI

10.1109/ICSICT.2001.982147

Filename

982147