Title :
A novel quasi-dielectrically isolated bipolar transistor using epitaxial lateral overgrowth
Author :
Duey, S.J. ; Neudeck, G.W.
Author_Institution :
Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
A new, quasi-dielectrically isolated (QDI) bipolar structure using epitaxial lateral overgrowth (ELO) is presented. A main application for QDI is in power integrated circuits, where isolation of high-power devices and low-power logic is necessary. The ELO-QDI structure uses of combination of dielectric isolation and junction isolation providing better isolation properties than junction isolation, while providing better heat dissipation than dielectric isolation. The ELO silicon was grown at a low-temperature, 950°C, low-pressure, 150 torr, in a RF-heated pancake-type reactor. Fabricated transistors have gains, ideality factors, and leakage currents comparable to those of bulk-devices
Keywords :
bipolar integrated circuits; bipolar transistors; power integrated circuits; semiconductor growth; vapour phase epitaxial growth; 150 torr; 950 degC; RF-heated pancake-type reactor; dielectric isolation; epitaxial lateral overgrowth; gains; heat dissipation; ideality factors; junction isolation; leakage currents; power integrated circuits; quasi-dielectrically isolated bipolar transistor; Bipolar transistors; Costs; Dielectric devices; Dielectric substrates; Leakage current; Logic devices; Power integrated circuits; Silicon; Thermal conductivity; Thermal expansion;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1988.51088
