Title :
Fabrication and characteristics of a Si multiple-quantum dots single electron transistor on SIMOX substrate
Author :
Lu, Gang ; Wan, Jiannong ; Ge, Weikun ; Mao, Shengchun ; Chen, Zhiming
Author_Institution :
Dept. of Phys., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Abstract :
We report Si-based multiple-quantum dots single electron transistors (SETs) on p-type SIMOX substrates, based on electron beam (EB) lithography and reactive ion etching (RIE) processes. These processes offer controlled fabrication of the quantum wires (QWs) and quantum dots (QDs). Coulomb blockade and single electron tunneling are observed in the SETs.
Keywords :
Coulomb blockade; electron beam lithography; elemental semiconductors; nanotechnology; semiconductor quantum dots; silicon; single electron transistors; sputter etching; Coulomb blockade; SET; Si; electron beam lithography; fabrication processes; multiple-quantum dots; p-type SIMOX substrates; quantum dots; quantum wires; reactive ion etching; single electron transistor; single electron tunneling; Etching; Fabrication; Lithography; Oxidation; Quantum dots; Single electron transistors; Substrates; Temperature; US Department of Transportation; Wire;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982166
