Title :
High-power microwave semiconductor controlling devices
Author :
Razinkin, V.P. ; Matvejev, S.J. ; Rubanovitch, M.G. ; Khrustalev, V.A.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
In the present work a symmetric distributed structure included powerful switching diodes is considered. The wave impedance transformation of the microwave tract and the input reflection factor value close to one, providing outside the band of working frequencies, allows us to expand essentially the band of working frequencies. The developed technique of calculation can be used for designing various microwave control devices
Keywords :
attenuators; commutators; microwave diodes; microwave switches; p-i-n diodes; power semiconductor diodes; power semiconductor switches; high-power microwave control devices; high-power semiconductor control devices; input reflection factor value; microwave semiconductor devices; power switching diodes; symmetric distributed structure; transmission line; wave impedance transformation; Attenuators; Band pass filters; Frequency; Impedance; Microwave devices; Microwave theory and techniques; Power semiconductor switches; Reflection; Semiconductor diodes; Transformers;
Conference_Titel :
Microwave Electronics: Measurements, Identification, Application Conference, 2001. MEMIA 2001
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-6743-X
DOI :
10.1109/MEMIA.2001.982314
