The transition from integrability to chaos in near-infrared semiconductor microdisk lasers

Author

Narimanov, Evgenii ; Gmach ; Capasso, Federico ; Baillargeon ; Cho, Andrew Y.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ, USA

fYear

2002

fDate

19-24 May 2002

Firstpage

22

Lastpage

23

Abstract

Summary form only given. The structure of our lasers consisted of a single Ga/sub 0.82/In/sub 0.18/As quantum well embedded in a GaAs/Ga/sub 0.5/In/sub 0.49/P waveguide grown on GaAs substrate by molecular beam epitaxy (MBE). The primary objective of the present work is the study of this fundamental phenomenon and, specifically, its manifestations in the lasing spectra.

Keywords

gallium arsenide; indium compounds; infrared sources; molecular beam epitaxial growth; optical chaos; quantum well lasers; waveguide lasers; Ga/sub 0.82/In/sub 0.18/As; Ga/sub 0.82/In/sub 0.18/As quantum well; GaAs-Ga/sub 0.5/In/sub 0.49/P; GaAs/Ga/sub 0.5/In/sub 0.49/P waveguide; MBE; lasing spectra; molecular beam epitaxy; near-infrared semiconductor microdisk lasers; Chaos; Epitaxial growth; Gallium compounds; Indium compounds; Quantum well lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031034

Filename

1031034