Title :
Systematic calibration of AC MOSFET model parameters including non-quasi-static effect
Author :
Miliozzi, Paolo ; Matloubian, Mishel ; Tennyson, Mark
Author_Institution :
Rockwell Int. Corp., Newport Beach, CA, USA
Abstract :
In this paper a novel methodology for simultaneous calibration of critical AC MOSFET model parameters is presented. The approach was developed to specifically address new AC parameters introduced to model deep-submicron effects. The technique is valid in general and was applied to BSIM3v3.1, currently considered the industrial standard non-proprietary model. The significance of these new AC parameters, as well as of the NQS effect, are highlighted. Using the proposed calibration methodology we were able to increase the simulation accuracy and hence to reduce the error with respect to measure data from as high as 35% to less than 3%
Keywords :
MOSFET; calibration; semiconductor device models; AC MOSFET model parameters; BSIM3v3.1; calibration methodology; deep-submicron effects; nonquasi-static effect; systematic calibration; Analytical models; Calibration; Capacitance; Circuit optimization; Circuit testing; Frequency; Geometry; MOSFET circuits; Physics; Ring oscillators;
Conference_Titel :
Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-4292-5
DOI :
10.1109/CICC.1998.694966
