DocumentCode
2222808
Title
Comparison of Si and GaAs schottky detectors
Author
Varlashov, I.B. ; Shnitnikov, A.S. ; Gudkova, N.B.
Author_Institution
Moscow Power Eng. Inst. (Tech. Univ.), Moscow, Russia
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
189
Lastpage
190
Abstract
Comparative investigation of Si and GaAs microwave detector diodes has been carried out.
Keywords
III-V semiconductors; Schottky diodes; elemental semiconductors; gallium arsenide; microwave detectors; silicon; GaAs; Schottky detector diode; Si; microwave detector diode; Analytical models; Detectors; Gallium arsenide; Schottky diodes; Sensitivity; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6068894
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