• DocumentCode
    2223404
  • Title

    Breakdown pecularity of the shifted to source mesfet gate

  • Author

    Martynov, Y.B. ; Pogorelova, E.V.

  • Author_Institution
    Fed. State Unitary Corp. R&PC Istok, Fryazino, Russia
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    250
  • Lastpage
    250
  • Abstract
    Asymmetry of the gate-source and gate-drain current-voltage characteristics is connected with anomalous gate-source active layer punch through.
  • Keywords
    Schottky gate field effect transistors; MESFET gate; breakdown pecularity; gate-drain current-voltage characteristics; gate-source active layer punch through; gate-source current-voltage characteristics; Current-voltage characteristics; Electronic mail; Gallium arsenide; Logic gates; MESFETs; Neodymium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6068918
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2223404