Title :
Silicon nanowire/Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) core-sheath heterojunction solar cells
Author :
Syu, Hong-Jhang ; Shiu, Shu-Chia ; Lin, Ching-Fuh
Author_Institution :
Grad. Inst. of Photonics & Optoelectron., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Silicon nanowire (SiNW)/Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) solar cells were fabricated by solution process. The nanowires of 370 nm were coated with PEDOT:PSS. The short circuit current density and power conversion efficiency are 27.46 mA/cm2 and 8.05%, respectively.
Keywords :
coatings; current density; elemental semiconductors; nanofabrication; nanowires; polymers; power conversion; semiconductor heterojunctions; short-circuit currents; silicon; solar cells; PEDOT-PSS; core sheath heterojunction solar cell; poly(3,4-ethylenedioxythiophene); poly(styrenesulfonate); power conversion efficiency; short circuit current density; silicon nanowire; solution process; Arrays; Etching; Glass; Hafnium; Indium tin oxide; Photovoltaic cells; Silicon;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
