DocumentCode
2225481
Title
Low voltage self-biasing reference circuits
Author
Xiaobin, Ye ; Zhiliang, Chen
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2001
fDate
2001
Firstpage
314
Lastpage
317
Abstract
A new kind on-chip self-biasing reference circuit is presented, which is suitable for modern low voltage low dissipation applications. Using MOS peaking current mirror working in subthreshold region to construct a self-biasing circuit and a voltage-reference generate-stage, it has great rejection to power variation and has strong temperature stability. This circuit is also suitable for today´s IC process
Keywords
MOS integrated circuits; current mirrors; low-power electronics; reference circuits; IC process; MOS peaking current mirror; low-voltage self-biasing reference circuit; power variation rejection; subthreshold region; temperature stability; voltage reference stage; Batteries; CMOS technology; Circuit stability; Low voltage; Microelectronics; Mirrors; Mobile handsets; Power generation; Power supplies; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location
Shanghai
Print_ISBN
0-7803-6677-8
Type
conf
DOI
10.1109/ICASIC.2001.982562
Filename
982562
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