• DocumentCode
    2226595
  • Title

    Importance of biexcitonic scattering in exciton dephasing in quantum dots

  • Author

    Gotoh, H. ; Kamada, Hiroki ; Saitoh, Takashi ; Ando, Hideki ; Temmyo, J.

  • Author_Institution
    NTT Basic Res. Labs., NTT Corp., Kanagawa, Japan
  • fYear
    2002
  • fDate
    19-24 May 2002
  • Firstpage
    156
  • Abstract
    Summary form only given. The mechanism of exciton dephasing was clarified in zero-dimensional(0-D) InGaAs quantum dots by high-energy resolution single dot spectroscopy. We measured the exciton dephasing time from homogenous linewidth of excited levels of an exciton in an isolated quantum dot. Although the exciton acoustic phonon scattering has been believed to be the origin of the dephasing so far, we found that the biexcitonic scattering plays an very important role in the dephasing. This is a distinct feature of the 0-D quantum dot structure which has never been observed in 3-D, 2-D and 1-D structures.
  • Keywords
    III-V semiconductors; biexcitons; gallium arsenide; indium compounds; photoluminescence; semiconductor quantum dots; spectral line breadth; InGaAs; PL signal; biexcitonic scattering; exciton dephasing; exciton recombination; exciton-exciton interaction; high-energy resolution single dot spectra; homogenous linewidth; isolated quantum dot; self-assembled; zero-dimensional quantum dots; Excitons; Gallium compounds; Indium compounds; Photoluminescence; Quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
  • Conference_Location
    Long Beach, CA, USA
  • Print_ISBN
    1-55752-708-3
  • Type

    conf

  • DOI
    10.1109/QELS.2002.1031248
  • Filename
    1031248