Title :
Hf-based high-k gate dielectrics - Scalability for hp45 node and beyond -
Author :
Nara, Yasuo ; Inumiya, Seiji ; Kamiyama, Satoshi ; Nakamura, Kunio
Author_Institution :
Res. Dept. 1, Semicond. Leading Edge Technol., Inc., Tsukuba
fDate :
Jan. 30 2006-Feb. 1 2006
Abstract :
This proceeding we will discuss the scalability of Hf-based high-k gate dielectrics for hp45 node and beyond both with high-temperature gate-first integration and low-temperature gate-last integration. It describes the process optimization and metal gate MOSFET characteristics using gate-first integration with HfSiON and gate-last integration with HfO2.
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; HfO2; HfSiON; high-k gate dielectric scalability; high-temperature gate-first integration; hp45 node; low-temperature gate-last integration; metal gate MOSFET; process optimization; Fabrication; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Nitrogen; Optical films; Plasma measurements; Presence network agents; Scalability;
Conference_Titel :
Nano CMOS, 2006 International Workshop on
Conference_Location :
Mishima
Print_ISBN :
978-1-4244-0603-6
DOI :
10.1109/IWNC.2006.4570984
