Application of AFM methods to control technological operations in the process of manufacturing phosphide-based hetero-bipolar transistors

Author

Torkhov, N.A. ; Bozhkov, V.G. ; Novikov, V.A. ; Ivonin, I.V. ; Marmalyuk, Aleksandr A. ; Ryaboshtan, Y.L.

Author_Institution

Sci. - Res. Inst. of Semicond., Tomsk, Russia

fYear

2011

fDate

12-16 Sept. 2011

Firstpage

691

Lastpage

692

Abstract

It was shown that modern AFM methods of controlling geometry and physical parameters of semiconductor InP/InGaAs/InP heterostructures can be successfully applied in manufacturing of modern UHF DHBT-transistors with narrow base (<; 100 nm). Operational control of geometric and physical parameters of heterostucture in intervals between carrying out technological operations allows controlling more effectively their manufacture and production.

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device manufacture; AFM methods; InP-InGaAs-InP; UHF DHBT-transistors; geometry control; phosphide-based heterobipolar transistors; physical parameter control; semiconductor heterostructures; technological operation control; Electronic mail; Heterojunctions; Indium gallium arsenide; Indium phosphide; Manufacturing; Microscopy; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4577-0883-1

Type

conf

Filename

6069110