A high power and high efficiency power amplifier for local multipoint distribution service

Author

Siddiqui, M.K. ; Sharma, A.K. ; Callejo, L.G. ; Chung-Hsu Chen ; Kin Tan ; Huan-Chun Yen

Author_Institution

Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA

Volume

2

fYear

1996

fDate

17-21 June 1996

Firstpage

701

Abstract

This paper presents a high power and high efficiency MIC power amplifier using 0.2 /spl mu/m InGaAs-AlGaAs-GaAs pseudomorphic HEMT (PHEMT) devices. The average performance of the power amplifier is 8.75 dB small signal gain, 39.6% power-added-efficiency, and 37 dBm (5.0 W) from 27.5 to 29.5 GHz. At these power levels, the output power density was 780 mW/mm including output circuit losses. This represents the highest output power and efficiency ever reported at Ka-band using MIC amplifiers.

Keywords

HEMT circuits; hybrid integrated circuits; microwave integrated circuits; microwave power amplifiers; power amplifiers; 0.2 micron; 27.5 to 29.5 GHz; 39.6 percent; 5 W; 8.75 dB; InGaAs-AlGaAs-GaAs; Ka-band; MIC power amplifier; PHEMT devices; high efficiency power amplifier; high power operation; hybrid MIC; local multipoint distribution service; pseudomorphic HEMT; Distributed amplifiers; Frequency; Gain; Gallium arsenide; High power amplifiers; Microwave integrated circuits; Millimeter wave technology; PHEMTs; Power amplifiers; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.511036

Filename

511036