Title :
Parameter extraction of BSIM based on S3 theory
Author :
Xunjin, Dou ; Lingxiao, Zhang ; Jie, Yang ; Ji Lijiu ; Jun, Gu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
We develop a novel algorithm for parameter extraction of semiconductor devices. The S3 algorithm, which is functional for NP-hard problems in discrete space, is applied to the parameter extraction of BSIM (Berkeley Short-channel IGFET Model). By using this algorithm, a relatively large number of model parameters can be optimized globally and extracted simultaneously. As to BSIM1, two distinct S3 smoothing strategies, accompanied by the LS-NR method, are used to extract the parameters. In contrast to the results obtained by using the LS-NR method alone, those derived after the introduction of these strategies are improved greatly
Keywords :
insulated gate field effect transistors; optimisation; parameter estimation; search problems; semiconductor device models; smoothing methods; BSIM; BSIM1; Berkeley short-channel IGFET model; LS-NR method; NP-hard problems; S3 theory; global optimization; parameter extraction; searching space smoothing; semiconductor devices; Computer science; Data mining; Differential equations; Microelectronics; NP-hard problem; Parameter extraction; Plugs; Semiconductor devices; Smoothing methods; Space technology;
Conference_Titel :
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6677-8
DOI :
10.1109/ICASIC.2001.982662