DocumentCode
2228532
Title
Impact of the vertical layer structure on the emission directionality of thin-film InGaN photonic crystal LEDs
Author
Rangel, Elizabeth ; Matioli, Elison ; Chen, Hung-Tse ; Weisbuch, Claude ; Speck, James S. ; Hu, Evelyn L.
Author_Institution
Dept. of Mater., Univ. of California, Santa Barbara, CA, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
This work explores the impact of cavity thickness, photonic crystal etch depth, and quantum well placement on the extraction efficiency and emission directionality of thin-film InGaN photonic crystal light-emitting diodes (LEDs).
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photonic crystals; quantum well devices; wide band gap semiconductors; InGaN; cavity thickness; emission directionality; extraction efficiency; photonic crystal etch depth; photonic crystal light emitting diode; quantum well placement; thin film photonic crystal LED; vertical layer structure; Cavity resonators; Light emitting diodes; Metals; Optical device fabrication; Optical reflection; Photonic crystals; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950166
Link To Document