• DocumentCode
    2228633
  • Title

    Characteristics of MOS-transistor on basis of silicon-carbon nanotube

  • Author

    Griadun, V.I.

  • Author_Institution
    Zaporozhye Nat. Tech. Univ., Zaporozhye, Ukraine
  • fYear
    2011
  • fDate
    12-16 Sept. 2011
  • Firstpage
    781
  • Lastpage
    782
  • Abstract
    The MOS transistor model on the basis of silicon-carbon nanotube (SiCNT) has been designed. The nanotube has been used as the semiconductor channel of model of the transistor. It has indices (6.0) and width of a bandgap 0.7 eV. The silicon dioxide (SiO2) layer by thickness of 2.2 nm has been used as the undergate insulator. In calculations of characteristics of the transistor a method of the self-consistent field of electrical potential and the step density of quantum states have been used.
  • Keywords
    MOSFET; carbon nanotubes; elemental semiconductors; silicon; silicon compounds; MOS transistor model; Si; electrical potential; semiconductor channel; silicon carbon nanotube; silicon dioxide layer; size 2.2 nm; step density; tum states; undergate insulator; Carbon nanotubes; Logic gates; MOSFET circuits; Silicon carbide; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-1-4577-0883-1
  • Type

    conf

  • Filename
    6069148
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2228633