Title :
Peculiarities of electron transport in double-barrier structures in high frequency electric fields
Author :
Kapralova, A.A. ; Lukashin, V.M. ; Pashkovskiy, A.B.
Author_Institution :
Fed. State Unitary Corp. R&PC Istok, Fryazino, Russia
Abstract :
For asymmetric double-barrier resonant-tunneling structures with thin high barriers, the simple expressions describing resonant transitions in the large-signal high-frequency electric fields have been obtained taking into account levels width. The levels width dependence versus amplitude of the intensive high frequency electric field and peculiarities of electron transport near resonant levels centers has been investigated.
Keywords :
electric fields; resonant tunnelling; asymmetric resonant-tunneling structures; double-barrier structures; electron transport; large-signal high-frequency electric fields; resonant transitions; Buildings; Electric fields; Electronic mail; Resonant frequency; Resonant tunneling devices;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
