Title :
Determination of thermal parameters of semiconductors by photoacoustic phase angle technique
Author :
Negm, S. ; Talaat, Hossam
Author_Institution :
Fac. of Eng., Zagazig Univ.
fDate :
31 Oct-3 Nov 1993
Abstract :
Photoacoustic (PA) technique in the gas microphone configuration has been employed to determine the thermal properties of GaAs samples using the phase angle measurements in the saturation region. The doped samples are either n-type (6.9×1017-5.6×1018 ) or p-type (2.08×1017-2.1×1020). The values of the thermal diffusivity (α) are found to change with the dopant concentration and type
Keywords :
III-V semiconductors; gallium arsenide; photoacoustic effect; thermal diffusivity; thermal variables measurement; GaAs; dopant concentration; gas microphone configuration; n-type; p-type; photoacoustic phase angle measurement; saturation; semiconductors; thermal diffusivity; thermal parameters; Absorption; Gallium arsenide; Goniometers; Microphones; Phase measurement; Semiconductor materials; Solids; Spectroscopy; Temperature; Thermal conductivity;
Conference_Titel :
Ultrasonics Symposium, 1993. Proceedings., IEEE 1993
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-2012-3
DOI :
10.1109/ULTSYM.1993.339497
