Photoacoustic signals from the ion-implanted layer of silicon substrate

Author

Ikari, Tomofumi ; Maeda, Kumiko ; Futagami, K.

Author_Institution

Dept. of Electron., Miyazaki Univ.

fYear

1993

fDate

31 Oct-3 Nov 1993

Firstpage

815

Abstract

A nonradiative transition in ion-implanted and epitaxially grown layers on Si substrate were measured by a piezoelectric photoacoustic (PA) spectroscopy. It is considered that the observed peak at 1.07 eV is caused by a nonradiative recombination of optically excited electrons from boron acceptor levels. The decrease of the 1.07 eV peak intensity by ion implantation is considered to be due to a formation of surface damaged layer with deep defect levels. The PA spectra of epitaxially grown samples are well explained by summing the spectra of p- and n-type bulk samples. The electric field at the p-n junction is not effective for the PA signal generation mechanism

Keywords

electron-hole recombination; elemental semiconductors; impurity electron states; ion implantation; p-n homojunctions; photoacoustic spectra; photoconductivity; semiconductor epitaxial layers; silicon; Si; Si substrate; acceptor levels; deep defect levels; ion implantation; nonradiative recombination; nonradiative transition; optically excited electrons; p-n junction; piezoelectric photoacoustic spectroscopy; Boron; Electron optics; Ion implantation; P-n junctions; Particle beam optics; Signal generators; Silicon; Spectroscopy; Spontaneous emission; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1993. Proceedings., IEEE 1993

Conference_Location

Baltimore, MD

Print_ISBN

0-7803-2012-3

Type

conf

DOI

10.1109/ULTSYM.1993.339498

Filename

339498