Title :
Growths of InGaN-based light-emitting diodes with AlInN thin barrier for efficiency droop suppression
Author :
Liu, Guangyu ; Zhao, Hongping ; Zhang, Jing ; Tansu, Nelson
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
The growths of InGaN quantum wells light-emitting diodes with AlInN thin barrier were performed by metal organic chemical vapor deposition, and this approach led to reduction in thermionic carrier escape and efficiency droop.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; semiconductor growth; semiconductor quantum wells; thermionic emission; InGaN-AlInN-GaN; efficiency droop suppression; light emitting diodes; metal organic chemical vapor deposition; quantum well growths; thermionic carrier escape; thin barrier; Current density; Gallium nitride; Light emitting diodes; Metals; Power generation; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
