Monolithic bulk acoustic filters to X-band in GaAs

Author

Stokes, R.B. ; Crawford, John

Author_Institution

TRW Inc., Redondo Beach, CA

fYear

1993

fDate

31 Oct-3 Nov 1993

Firstpage

547

Abstract

The Semiconductor Bulk Acoustic Resonator (SBAR) is a promising narrowband component for gallium arsenide integrated circuits. Its high Q makes it superior to microstrip structures for narrowband filters and oscillators. it operates at frequencies up to X-band and beyond because all GaAs is removed underneath the thin film membrane, leaving a total structure as thin as 1 micrometer. This high frequency makes it a convenient building block for HBT, MESFET, and HEMT microwave circuits. We have already reported SBAR/HBT filter-amplifier chips, single-pole filters at X-band, and multipole filters at 2.4 GHz. Here, we summarize our current capability, report designs and results for SBAR 2-pole filters up to X-band, and discuss potential applications

Keywords

III-V semiconductors; MMIC; acoustic filters; acoustic resonators; band-pass filters; gallium arsenide; microwave filters; multiport networks; 2.4 GHz; GaAs; HBT; HEMT microwave circuits; MESFET; SBAR/HBT filter-amplifier chips; X-band; designs; high frequency; integrated circuits; microstrip structures; monolithic bulk acoustic filters; multipole filters; narrowband component; narrowband filters; oscillators; potential applications; semiconductor bulk acoustic resonator; single-pole filters; thin film membrane; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Microstrip filters; Microwave filters; Microwave oscillators; Narrowband; Resonator filters; Semiconductor thin films; Thin film circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1993. Proceedings., IEEE 1993

Conference_Location

Baltimore, MD

Print_ISBN

0-7803-2012-3

Type

conf

DOI

10.1109/ULTSYM.1993.339550

Filename

339550