Piezoelectric AlN film for SAW devices applications

Author

Caliendo, C. ; Saggio, Giovanni ; Verardi, P. ; Verona, E.

Author_Institution

Istituto di Acustica, CNR, Rome

fYear

1993

fDate

31 Oct-3 Nov 1993

Firstpage

249

Abstract

Polycrystalline AlN films with the c-axis oriented normal to the substrate surface, were deposited by RF reactive diode magnetron sputtering on fused quartz, silicon and sapphire. The films were characterized as to their morphology, optic and acoustic characteristics. The phase velocity dispersion curves vs. normalized film thickness were evaluated theoretically together with the electromechanical coupling coefficient for the four different interdigital transducers geometries. The theoretical results were compared with the experimental values. Results showed AlN film suitable for applications to SAW devices

Keywords

Rayleigh waves; aluminium compounds; piezoelectric thin films; sputtered coatings; surface acoustic wave devices; surface topography; AlN; RF reactive diode magnetron sputtering; SAW devices applications; acoustic characteristics; c-axis oriented; electromechanical coupling coefficient; interdigital transducers geometries; morphology; optical characteristics; piezoelectric AlN film; Diodes; Optical films; Piezoelectric devices; Piezoelectric films; Radio frequency; Semiconductor films; Sputtering; Substrates; Surface acoustic wave devices; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 1993. Proceedings., IEEE 1993

Conference_Location

Baltimore, MD

Print_ISBN

0-7803-2012-3

Type

conf

DOI

10.1109/ULTSYM.1993.339578

Filename

339578