Title :
Nano-meter electrode fabrication technology using anodic oxidation resist and application to 20 GHz-range SAW devices
Author :
Yamanouchi, Kazuhiko ; Odagawa, Hiroyuki ; Meguro, Tomomi ; Wagatsuma, Y. ; Yamamoto, Koji
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
fDate :
31 Oct-3 Nov 1993
Abstract :
Nano-meter lithography technology is very important for high density integrated circuits and higher frequency-range SAW devices. The frequency ranges of mobile communication systems are now around 1 GHz and are extending to 2~4 GHz. Moreover SAW devices require a frequency range of around 10 GHz. The authors propose new lithography techniques of below 0.05 μm electrode width. The electrodes are fabricated by using very thin anodic oxidation films as a resist and wet or dry etching techniques. The results show 0.075 μm width IDTs with thickness of about 0.03 μm on 128° Y-X LiNbO3. SAW experimental results show the 20 GHz-range characteristics. Also, new lithography technologies are applied to 2 GHz low loss filters using a unidirectional transducer
Keywords :
acoustic microwave devices; anodisation; electrodes; electron beam lithography; etching; nanotechnology; photolithography; surface acoustic wave devices; surface acoustic wave filters; ultrasonic transducers; 0.03 mum; 0.075 mum; 128° Y-X LiNbO3; 2 GHz; 20 GHz; 20 GHz-range SAW devices; Al2O3-Al-LiNbO3; IDTs; LiNbO3; PMMA; anodic oxidation resist; dry etching; electron beam resist; low loss filters; mobile communication systems; nanometer electrode fabrication technology; nanometer lithography technology; photoresist; unidirectional transducer; wet etching; Electrodes; Fabrication; Frequency; Integrated circuit technology; Lithography; Mobile communication; Nanoscale devices; Oxidation; Resists; Surface acoustic wave devices;
Conference_Titel :
Ultrasonics Symposium, 1993. Proceedings., IEEE 1993
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-2012-3
DOI :
10.1109/ULTSYM.1993.339583