An efficient and practical MOS statistical model for digital applications

Author

Zhang, Q. ; Liou, J.J. ; McMacken, J. ; Stiles, K. ; Thomson, J. ; Layman, P.

Author_Institution

Dept. of ECE, Univ. of Central Florida, Orlando, FL, USA

Volume

2

fYear

2000

fDate

2000

Firstpage

433

Abstract

A practical approach of extracting MOS device BSIM3 model parameters to represent process variations is presented. Based on this approach, the performance spread of an MOS digital circuit can be predicted. The extraction scheme uses only end-of-line data so no extra measurements are needed. By integrating the model with routine data from the fabrication line, the statistical model can be built efficiently and updated frequently to reflect process changes. The developed statistical model is applied to the 0.25 μm technology and verified on a 501-stage ring oscillator circuit

Keywords

CMOS digital integrated circuits; MOSFET; integrated circuit modelling; semiconductor device noise; statistical analysis; 0.25 micron; CMOS technology; MOS device BSIM3 model parameters; MOS digital circuit; MOS statistical model; digital applications; end-of-line data; model parameters extraction; performance spread prediction; process variations; ring oscillator circuit; Circuit optimization; Circuit simulation; Data mining; Fabrication; Integrated circuit yield; MOS devices; Parameter extraction; Predictive models; Sampling methods; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on

Conference_Location

Geneva

Print_ISBN

0-7803-5482-6

Type

conf

DOI

10.1109/ISCAS.2000.856357

Filename

856357