Title :
Differential carrier lifetimes and efficiency of InGaN/GaN quantum well and quantum dot light emitting diodes
Author :
Banerjee, Animesh ; Zhang, Meng ; Bhattacharya, Pallab
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Temperature-dependent efficiency and differential carrier lifetimes have been measured on InGaN/GaN quantum well and quantum dot LEDs. The roles of Auger recombination and carrier leakage in LED efficiency roll-off are elucidated.
Keywords :
Auger effect; III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor quantum dots; semiconductor quantum wells; wide band gap semiconductors; Auger recombination; InGaN-GaN; LED; carrier leakage; differential carrier lifetimes; quantum dot light emitting diodes; quantum well light emitting diodes; temperature-dependent efficiency; Gallium nitride; Light emitting diodes; Plasma temperature; Quantum well devices; Radiative recombination; Temperature dependence; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
