Conductive Bridging Memory Development from Single Cells to 2Mbit Memory Arrays

Devices based on bipolar resistive switching in solid electrolytes are among the promising emerging memory technologies. Information storage is based on stable formation and removal of conductive links during electrical operation. In this paper, development results achieved during a joint project of Qimonda AG and ALTIS Semiconductor including the characterization of single cells and electrical data from recently processed 2Mbit memory array devices based on 90 nm CMOS technology node are presented. The unique combination of low-power, non-volatile, and fast operation for CBRAM will be shown. Measured data will demonstrate the excellent multi-level capability promoting the competitiveness with existing technologies in terms of bit density. Furthermore, technology challenges and memory application relevant features like endurance, retention, and operating temperature will be discussed.