Novel optical structure for micromachined wavelength-selective and tunable InP based MOEMS

Author

Zhou, D. ; Sun, K. ; Garrigues, M. ; Leclercq, J.-L. ; Regreny, P. ; Peng, J. ; Viktorovitch, P.

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

fYear

2002

fDate

20-23 Aug. 2002

Firstpage

203

Lastpage

204

Abstract

The paper describes a new concept for the fabrication of integrated wavelength selective photo-detectors (or emitters). These devices are based on the InP/InGaAs semiconductor system for application in the wavelength range from 1.1 to 1.7 /spl mu/m. Such integrated wavelength selective and tunable active devices are expected to be cost effective solutions for NIR spectroscopy or WDM optical communications.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared spectroscopy; integrated optics; micro-optics; micromachining; photodetectors; wavelength division multiplexing; 1.1 to 1.7 micron; InP-InGaAs; InP/InGaAs; NIR spectroscopy; WDM optical communications; integrated wavelength selective photo-detectors; integrated wavelength selective photo-emitters; micromachined wavelength-selective MOEMS; optical structure; tunable InP based MOEMS; High speed optical techniques; Indium phosphide; Optical design; Optical device fabrication; Optical devices; Optical filters; Optical pumping; Optical sensors; Resonance; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical MEMs, 2002. Conference Digest. 2002 IEEE/LEOS International Conference on

Conference_Location

Lugano, Switzerland

Print_ISBN

0-7803-7595-5

Type

conf

DOI

10.1109/OMEMS.2002.1031512

Filename

1031512