DocumentCode :
2232858
Title :
Probing ultrafast dynamics of electrons and holes in graphene
Author :
Dawlaty, Jahan M. ; Shivaraman, Shriram ; Chandrashekhar, Mvs ; Rana, Farhan ; Spencer, Michael G.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY
fYear :
2008
fDate :
4-9 May 2008
Firstpage :
1
Lastpage :
2
Abstract :
Using pump-probe techniques, we study the ultrafast relaxation dynamics of photoexcited carriers in graphene. We find an initial fast relaxation transient (70-120 fs), followed by a slower relaxation process (0.4-1.7 ps). We relate the measured time scales to carrier-carrier and carrier-phonon intraband and interband scattering processes and also to crystal disorder in the material.
Keywords :
carbon; carrier relaxation time; high-speed optical techniques; nanostructured materials; phonons; C; carrier-carrier interband scattering; carrier-carrier intraband scattering; carrier-phonon interband scattering; carrier-phonon intraband scattering; crystal disorder; fast relaxation transient; graphene; photoexcited carriers; pump-probe techniques; time 0.4 ps to 1.7 ps; time 70 fs to 120 fs; ultrafast dynamics probing; ultrafast relaxation dynamics; Charge carrier processes; Nonlinear optics; Optical noise; Optical pumping; Optical scattering; Optical sensors; Probes; Spontaneous emission; Ultrafast optics; X-ray scattering; (160.6000) Semiconductor materials; (320.7120) Ultrafast phenomena;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Lasers and Electro-Optics, 2008 and 2008 Conference on Quantum Electronics and Laser Science. CLEO/QELS 2008. Conference on
Conference_Location :
San Jose, CA
Print_ISBN :
978-1-55752-859-9
Type :
conf
Filename :
4571319
Link To Document :
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