A 39-46 GHz MMIC HBT triple-push VCO using cascode configuration

Author

Chen, Po-Yo ; Tang, Yu-Lung ; Wang, Huei ; Wang, Yu-Chi ; Chao, Pane-Chane ; Chen, Chung-Hsu

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2002

fDate

2002

Firstpage

61

Lastpage

64

Abstract

This paper reports the development of a Q-band (33-50 GHz) triple-push VCO using GaAs heterojunction bipolar transistor (HBT) MMIC technology. The circuit adopts cascode configuration of HBTs in order to increase the negative resistance at high frequency and thus to obtain a higher oscillation frequency. Based on the measured results, MMIC VCO achieves a tuning frequency range of 39 to 46 GHz.

Keywords

III-V semiconductors; MMIC oscillators; bipolar MIMIC; circuit tuning; gallium arsenide; heterojunction bipolar transistors; integrated circuit design; integrated circuit measurement; millimetre wave oscillators; negative resistance; voltage-controlled oscillators; 33 to 50 GHz; 39 to 46 GHz; GaAs; GaAs MMIC HBT triple-push VCO; GaAs heterojunction bipolar transistor MMIC technology; Q-band triple-push VCO; cascode configuration; high frequency negative resistance; millimeter-wave frequency sources; oscillation frequency; tuning frequency range; Circuit optimization; Electrical resistance measurement; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Inductors; MMICs; Resistors; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-7363-4

Type

conf

DOI

10.1109/APASIC.2002.1031532

Filename

1031532