DocumentCode
2233907
Title
In-line inspection to wafer test correlation
Author
Tomlinson, W. ; Jackson, F. ; St.Lawrence, M.A.
Author_Institution
Microelectron. Div., IBM Corp., Essex Junction, VT, USA
fYear
1996
fDate
12-14 Nov 1996
Firstpage
100
Lastpage
102
Abstract
A method for correlating optical in-line defects to electrically tested defects has been developed. Using this method, the validity of in-line defect categories and the possibility that they will cause a defect has been adjusted. This work was performed in one of two semiconductor fabricators at the IBM Microelectronics Division manufacturing facility in Essex Junction, Vermont
Keywords
DRAM chips; inspection; integrated circuit testing; integrated circuit yield; production testing; IBM Microelectronics Division; electrically tested defects; in-line inspections; optical in-line defects; semiconductor fabricators; wafer test correlation; yield loss; Chemicals; Electron optics; Etching; Inspection; Joining processes; Microelectronics; Optical arrays; Scanning electron microscopy; Semiconductor device manufacture; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Manufacturing Conference and Workshop, 1996. ASMC 96 Proceedings. IEEE/SEMI 1996
Conference_Location
Cambridge, MA
ISSN
1078-8743
Print_ISBN
0-7803-3371-3
Type
conf
DOI
10.1109/ASMC.1996.557980
Filename
557980
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