A 0.35-μm SiGe BiCMOS RF front-end IC for TD-SCDMA receiver

Author

Fu, Tz-Heng ; Chen, Shin-Fu ; Hsu, June-Ming

Author_Institution

STC, Ind. Technol. Res. Inst., Hsinchu, Taiwan

fYear

2002

fDate

2002

Firstpage

315

Lastpage

318

Abstract

A TD-SCDMA RF front-end receiver IC, which is fabricated in a 0.35 μm SiGe BiCMOS technology, is presented in this paper. This IC contains two blocks, low-noise amplifier (LNA) and mixer, and operates at 2.7 V supply voltage with a current consumption of 14.7 mA. The measured NF and power gain of the IC are 2.7 dB and 31 dB, respectively. It is shown that RF front-end circuit which is implemented in a SiGe BiCMOS process has more advantages than CMOS circuits, such as power consumption and NF performance.

Keywords

3G mobile communication; BiCMOS analogue integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; UHF mixers; integrated circuit design; integrated circuit noise; mobile radio; radio receivers; semiconductor materials; 0.35 micron; 14.7 mA; 1900 to 1920 MHz; 2.7 V; 2.7 dB; 2010 to 2025 MHz; 31 dB; 3G system; LNA; SiGe; SiGe BiCMOS RF front-end IC; SiGe BiCMOS technology; TD-SCDMA receiver; low-noise amplifier; mixer; BiCMOS integrated circuits; Germanium silicon alloys; Low-noise amplifiers; Noise measurement; Power measurement; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Time division synchronous code division multiple access; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ASIC, 2002. Proceedings. 2002 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-7363-4

Type

conf

DOI

10.1109/APASIC.2002.1031595

Filename

1031595