DocumentCode :
2236400
Title :
Optical static random access memory cell using an integrated semiconductor ring laser
Author :
Li, B. ; Memon, M.I. ; Mezosi, G. ; Wang, Z. ; Sorel, M. ; Yu, S.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Bristol, Bristol, UK
fYear :
2009
fDate :
15-19 Sept. 2009
Firstpage :
1
Lastpage :
2
Abstract :
An optical static random access memory cell is experimentally demonstrated using a semiconductor ring laser set-reset flip-flop integrated with four SOAs at each output. Read and write operations at 1 Gb/s are achieved.
Keywords :
optical storage; random-access storage; ring lasers; semiconductor lasers; semiconductor optical amplifiers; SOA; integrated semiconductor ring laser; optical static random access memory cell; set-reset flip-flop; Decision support systems; Integrated optics; Quadratic programming; Ring lasers; SRAM chips; Semiconductor lasers; SRAM; SRL; read and write;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photonics in Switching, 2009. PS '09. International Conference on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-3857-0
Electronic_ISBN :
978-1-4244-3856-3
Type :
conf
DOI :
10.1109/PS.2009.5307766
Filename :
5307766
Link To Document :
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