Title :
All-optical memories based on photonic crystal nanocavities
Author :
Shinya, A. ; Matsuo, S. ; Nozaki, K. ; Tanabe, T. ; Kuramochi, E. ; Sato, T. ; Kakitsuka, T. ; Notomi, M.
Author_Institution :
NTT Basic Res. Labs., Atsugi, Japan
Abstract :
We demonstrate all-optical bistable memory operation with InGaAsP photonic crystal nanocavities based on refractive index modulation caused by carrier-induced nonlinearity. The minimum bias power for bistability is extremely low at 40 muW and the operating energy required for switching is only 30 fJ.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; nanophotonics; optical bistability; optical modulation; optical storage; optical switches; photonic crystals; random-access storage; refractive index; InGaAsP; all-optical RAM system; all-optical bistable memory; carrier-induced nonlinearity; energy 30 fJ; photonic crystal nanocavities; power 40 muW; refractive index modulation; switching; Optical bistability; Optical buffering; Optical devices; Optical distortion; Optical filters; Optical packet switching; Optical refraction; Optical resonators; Optical variables control; Photonic crystals; InGaAsP; nanocavity; optical bit memory; photonic crystal;
Conference_Titel :
Photonics in Switching, 2009. PS '09. International Conference on
Conference_Location :
Pisa
Print_ISBN :
978-1-4244-3857-0
Electronic_ISBN :
978-1-4244-3856-3
DOI :
10.1109/PS.2009.5307771
