ESD Protection Capabilities of GaAs Schottky Diodes

Author

Ersland, Peter ; Somisetty, Shivarajiv

Author_Institution

Tyco Electron. Wireless Syst. Segment, Lowell

fYear

2007

fDate

14-14 Oct. 2007

Firstpage

141

Lastpage

152

Abstract

GaAs Schottky diodes varying in size from 40 mum to 400 mum anode periphery have been tested to assess their effectiveness as ESD protection devices in FET-based MMICs. ESD failure voltage is seen to increase linearly with diode size. While the capacitive loading of these diodes is too high for use in protection of most RF circuit ports, they have been shown to effectively protect sensitive DC logic circuits in E/D pHEMT switches.

Keywords

MMIC; Schottky diodes; electrostatic discharge; field effect transistor switches; gallium arsenide; integrated logic circuits; DC logic circuit; ESD protection device; FET-based MMIC; GaAs; GaAs - Interface; GaAs Schottky diodes; RF circuit port protection; electrostatic discharge; field effect transistor; monolithic microwave integrated circuit; pHEMT switches; Anodes; Circuit testing; Electrostatic discharge; Gallium arsenide; Logic circuits; MMICs; Protection; Radio frequency; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

ROCS Workshop, 2007.[Reliability of Compound Semiconductors Digest]

Conference_Location

Portland, OR

Print_ISBN

978-0-7908-0115-5

Type

conf

DOI

10.1109/ROCS.2007.4391068

Filename

4391068

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2236752