Reduction of shorts between polysilicon word lines on a 4 Meg DRAM product

Author

Todoroff, John A.

Author_Institution

MiCRUS, Hopewell Junction, NY, USA

fYear

1996

fDate

12-14 Nov 1996

Firstpage

276

Lastpage

280

Abstract

A significant reduction in defects in a polysilicon level was achieved by a team of process and diagnostic engineers. This paper will describe the methodology. Electrical measurements on a defect test site were used together with surface particle counter data and automated optical inspection to understand the problems and determine the success of various actions. Improvements were made at the oxidation, polysilicon deposition, anneal, photolithography, and RIE operations

Keywords

DRAM chips; automatic optical inspection; elemental semiconductors; integrated circuit measurement; particle counting; silicon; 4 Mbit; DRAM; RIE; Si; annealing; automated optical inspection; defect testing; electrical measurement; film deposition; oxidation; photolithography; polysilicon word line; short; surface particle counting; Automatic optical inspection; Automatic testing; Counting circuits; Electric variables measurement; Monitoring; Optical microscopy; Particle measurements; Random access memory; Scanning electron microscopy; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference and Workshop, 1996. ASMC 96 Proceedings. IEEE/SEMI 1996

Conference_Location

Cambridge, MA

ISSN

1078-8743

Print_ISBN

0-7803-3371-3

Type

conf

DOI

10.1109/ASMC.1996.558020

Filename

558020