• DocumentCode
    2237645
  • Title

    Reliability challenges of advanced CMOS process and product development: design and application aware qualification

  • Author

    Park, Jongwoo

  • Author_Institution
    Samsung Electron., Suwon, South Korea
  • fYear
    2012
  • fDate
    23-25 April 2012
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    Summary form only given. As advanced technology process rapidly migrates, more than Moore approach, with pursuing cutting-edge performance, power and area scaling, revolutionary introduction of new material, process and structure will tax traditional reliability target (spec) being continuously adopted for advanced CMOS process qualification to handle reliability concerns with finer granurality. Although ICs for all applications are currently coming from the same technology node and production line, silicon technology developers face technical juggernauts without the definition of application and associated reliability target, based on physics-based degradation model and circuit/system reliability simulation. Since future technology market is going to be driven by reliability-cost and reliability-performance, design aware and application specific reliability qualification is a critical topic needs a full attention in connection to silicon technology users.
  • Keywords
    CMOS integrated circuits; circuit simulation; integrated circuit design; integrated circuit reliability; product development; silicon; CMOS process qualification; IC; application aware qualification; application specific reliability qualification; area scaling; circuit reliability simulation; cutting-edge performance; design; physics-based degradation model; power scaling; product development; production line; reliability-cost; reliability-performance; silicon technology; system reliability simulation; Abstracts; Integrated circuit reliability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, Systems, and Applications (VLSI-TSA), 2012 International Symposium on
  • Conference_Location
    Hsinchu
  • ISSN
    1930-8868
  • Print_ISBN
    978-1-4577-2083-3
  • Type

    conf

  • DOI
    10.1109/VLSI-TSA.2012.6210121
  • Filename
    6210121