• DocumentCode
    2237685
  • Title

    IEGT design concept against operation instability and its impact to application

  • Author

    Omura, Ichiro ; Demon, T. ; Miyanagi, Toshiyuki ; Ogura, Tsuneo ; Ohashi, Hiromichi

  • Author_Institution
    Semicond. Co., Toshiba Corp., Kawasaki, Japan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    IEGT´s (Injection Enhanced Gate transistors) and HV-IGBT´s are inherently unstable inducing harmful current crowding and oscillation among paralleled chips or packages. The instability problem has become crucial in device design and application. This paper will describe the mechanism of the instability and propose effective solutions for device and package design against the problem
  • Keywords
    insulated gate bipolar transistors; power MOSFET; HV-IGBT; IEGT; current crowding; device design; injection enhanced gate transistor; instability; oscillation; Capacitance; Cathodes; Charge measurement; Current measurement; Electrons; MOS devices; Proximity effect; Research and development; Semiconductor device packaging; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
  • Conference_Location
    Toulouse
  • ISSN
    1063-6854
  • Print_ISBN
    0-7803-6269-1
  • Type

    conf

  • DOI
    10.1109/ISPSD.2000.856765
  • Filename
    856765
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2237685