Title :
High performance 300 V IGBTs
Author :
Shenoy, Praveen M. ; Yedinak, Joseph ; Gladish, Jon
Author_Institution :
Discrete Power Product Dev., Intersil Corp., Mountaintop, PA, USA
Abstract :
In this paper, we report for the first time, the measured characteristics of a low loss, high speed IGBT designed for 300 V operation. The optimized 300 V IGBTs exhibit a low Vce(sat) of 1.35 V and an extremely fast fall time of less than 20 ns at a current density of 120 A/cm2 and a junction temperature of 150°C. This extremely fast switching results in an Eoff of less than 5 μJ/A at 150°C which is comparable to that of a MOSFET. The IGBT has a maximum operating frequency of greater than 400 kHz at rated current. These new 300 V IGBTs exhibit lower total losses than a 250 V MOSFET at operating frequencies as high as 350 kHz. The IGBT is also optimized for UIS capability and has a single pulse avalanche energy capability in excess of 3 J/cm2 at rated current
Keywords :
insulated gate bipolar transistors; 150 C; 20 ns; 300 V; 400 kHz; IGBT; UIS waveform; high-speed device; power switching characteristics; single pulse avalanche energy; total losses; Current measurement; Frequency; Insulated gate bipolar transistors; Loss measurement; MOSFET circuits; Power MOSFET; Space technology; Temperature; Velocity measurement; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856810
