Title :
2.3 kVac 100 MHz multi-channel monolithic isolator IC
Author :
Kojima, Yasuyuki ; Nemoto, Minehiro ; Yukutake, Seigo ; Iwasaki, Takayuki ; Amishiro, Masatsugu ; Kanekawa, Nobuyasu ; Watanabe, Atsuo ; Takeuchi, Yusuke ; Akiyama, Noboru
Author_Institution :
Res. Lab., Hitachi Ltd., Ibaraki, Japan
Abstract :
We have developed a multi-channel monolithic isolator IC that can provide 2.3 kVac isolation and 100 MHz signal transmission. This IC uses high voltage on-chip isolator technology using trench isolation with buried oxide on the SOI substrate and 0.4 μm CMOS driver and receiver circuits. This technology enables to produce a 4-channel monolithic isolator with an area of 1.5 mm2 and a consumption current of 0.5 mA per channel at a frequency of 50 MHz. We have also developed a one-chip modem interface IC that includes the multi-channel isolator and an analog front-end circuit
Keywords :
CMOS integrated circuits; equivalent circuits; integrated circuit modelling; isolation technology; modems; power integrated circuits; silicon-on-insulator; 0.4 micron; 0.5 mA; 100 MHz; 4-channel monolithic isolator; 50 MHz; CMOS driver; CMOS receiver; HV on-chip isolator technology; SOI substrate; Si; buried oxide; multi-channel monolithic isolator IC; one-chip modem interface IC; trench isolation; Analog integrated circuits; CMOS integrated circuits; CMOS technology; Driver circuits; Frequency; Isolation technology; Isolators; Modems; Monolithic integrated circuits; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856832
