Title :
A novel `cool´ insulated base transistor
Author :
De Souza, M.M. ; Spulber, O. ; Narayana, E. M Sankara
Author_Institution :
Emerging Technol. Res. Centre, De Montfort Univ., Leicester, UK
Abstract :
A novel, planar, Cool Insulated Base Transistor (IBT) is presented. This is the first MOS-controlled bipolar semiconductor device, which incorporates the super junction concept. The Cool IBT has a current amplification of (β+1)* the Cool MOSFET current, where β is the gain of the inherent NPN transistor. Unlike the IGBT, cathode cells of the IBT and MOSFET can be easily paralleled on the same chip. Thus, the device can be turned on at a drain voltage of 0 V, while retaining the low on-resistance of the Cool IBT
Keywords :
power transistors; MOS-controlled bipolar semiconductor device; NPN transistor; cool insulated base transistor; current amplification; on-resistance; super junction; Cathodes; Doping; Insulated gate bipolar transistors; Insulation; MOSFET circuits; Ohmic contacts; Power MOSFET; Resistors; Semiconductor devices; Threshold voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856833
