Title :
LDMOS implementation in a 0.35 μm BCD technology (BCD6)
Author :
Moscatelli, A. ; Merlini, A. ; Croce, G. ; Galbiati, P. ; Contiero, C.
Author_Institution :
TPA Group, STMicroelectron., Milan, Italy
Abstract :
This paper presents the integration approach followed to implement power LDMOS´ up to 60 V into a 0.35 μm process technology (BCD6) based on a CMOS plus Flash-Memory platform of equivalent lithography generation, built on a P-over P+ substrate. Experimental results on LDMOS´ in terms of on-state specific resistance, off and on-state breakdown voltage, frequency behavior will be described analyzing the interactions between low voltage ULSI platform and high voltage power elements
Keywords :
CMOS memory circuits; ULSI; flash memories; power integrated circuits; 0.35 micron; 60 V; BCD technology; BCD6; ULSI CMOS flash memory; breakdown voltage; high voltage element; power LDMOS device; process integration; specific resistance; Batteries; CMOS process; CMOS technology; Consumer electronics; Energy management; Implants; Lithography; Microprocessors; Power generation; Power system management;
Conference_Titel :
Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on
Conference_Location :
Toulouse
Print_ISBN :
0-7803-6269-1
DOI :
10.1109/ISPSD.2000.856835